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By Maurice H. Francombe (Eds.)

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532. X-ray diffraction scans were used to verify the accuracy of the SE composition control. Using SE feedback control of the growth, a bulk film with a composition within the lattice-matching specification was achieved for initially indium-rich and gallium-rich growth. ) FIG. 13. associated with the establishment of high-volume production of III-V compound semiconductor devices are reviewed in what follows. The performance of any device while in production must be adequate to meet the intended end use application.

Most of the data reviewed here were obtained from single wafer systems and the sample rotation was low compared to that of a rotating disk reactor. Sophisticated structures, such as AlInAs/GaInAs on InP, require not only the development of accurate dielectric function libraries, but also rapid data processing and fast algorithms to allow critical lattice match conditions to be controlled. The control algorithms must also reflect the specifics of the growth reactions and be able to differentiate differences in the dielectric function due to changes in material composition and temperature.

The transverse, parabolic, nonuniformity due to the sidewalls can only be lessened by making the tube and susceptor widths considerably larger EPITAXIAL FILM GROWTH AND CHARACTERIZATION 21 than the wafer. Uniformities of 4-1% can be achieved in a fully optimized design, but in general, only for single wafer systems. For critical materials, such as the A1 containing III-Vs, a glove box filled with inert gas can be used at the end of the reactor to avoid exposing it to oxygen during tube removal for cleaning, and while loading the wafer.

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