By Phillip E. Allen, Douglas R. Holberg, Allen
After years of anticipation, revered authors Phil Allen and Doug Holberg carry you the second one variation in their well known textbook, CMOS Analog Circuit Design. From the leading edge of CMOS know-how, Phil and Doug have mixed their services as engineers and teachers to offer a state of the art and powerful evaluate of the rules and methods for designing circuits. Their major ambitions are:
· to combine the educational and functional viewpoints in a remedy that's neither superficial nor overly unique and
· to coach analog built-in circuit layout with a hierarchically prepared approach.
many of the innovations and rules offered within the moment variation were taught during the last ten years to contributors. Their wishes and questions have drastically formed the revision technique, making this re-creation a useful source for practising engineers.
The trademark strategy of Phil and Doug's textbook is its layout recipes, which take readers step by step throughout the construction of genuine circuits, explaining complicated layout difficulties. The publication offers certain insurance of often-neglected components and intentionally leaves out bipolar analog circuits, when you consider that CMOS is the dominant know-how for analog built-in circuit layout. acceptable for complicated undergraduates and graduate scholars with history wisdom in uncomplicated electronics together with biasing, modeling, circuit research, and frequency reaction, CMOS Analog Circuit layout, moment Edition, offers a whole photo of layout (including modeling, simulation, and checking out) and permits readers to layout an analog circuit that may be applied via CMOS technology.
· Orients the event of the specialist in the standpoint of layout methodology
· Identifies universal error made by means of starting designers
· presents issues of every one bankruptcy that strengthen and increase scholar understanding
· includes a number of difficulties that may be used as homework, quiz, or examination problems
· encompasses a new part on switched-capacitor circuits
· comprises precious appendices that offer simulation concepts and the subsequent supplemental material:
a quick overview of circuit research for CMOS analog design
A calculator application for examining CMOS circuits
A precis of time-frequency area relationships for second-order platforms
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Additional info for CMOS analog circuit design
1-3. 6-1 if the transistor of Fig. 1-2. 6-4 for the circuit of Fig. 6-2 if R1 = 200 KΩ. 1-1 Using SPICE, generate a set of parametric I-V curves similar to Fig. 1-3 for a transistor with a W/L = 10/1. 1-2. 1-2 The circuit shown in Fig. 1-2 illustrates a single-channel MOS resistor with a W/L of 2µm/1µm. 1-2 model parameters, calculate the small-signal on resistance of the MOS transistor at various values for VS and fill in the table below. 1-2 The equation for threshold voltage with absolute values so that it can be applied to nchannel or p-channel transistors without confusion.
1-18). ) Homework Solutions: 9/21/2002 W iD = K' 2L (vGS − VT)2 1 + λ (vDS − vDS(sat)) , 4 0 < (vGS − VT) ≤ vDS When vDS = vDS(sat) , this expression agrees with the non-saturation equation at the point of transition into saturation. Beyond saturation, channel-length modulation is applied to the difference in vDS and vDS(sat) . 2-1, calculate the values of CGB, CGS, and CGD for a MOS device which has a W of 5 µm and an L of 1 µm for all three regions of operation. We will need LD in these calculations.
3-4 Find the complete small-signal model for an n-channel transistor with the drain at 4 V, gate at 4 V, source at 2 V, and the bulk at 0 V. 2-1, and W/L = 10 µm/1 µm. 3-5. It is a parallel connection of n mosfet transistors. Each transistor has the same length, L, but each transistor can have a different width, W. Derive an expression for W and L for a single transistor that replaces, and is equivalent to, the multiple parallel transistors. 3-6. It is a series connection of n mosfet transistors.